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| DC COMPONENTS CO., LTD. R BC327 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Collector 2 = Base 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -45 -5 -500 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT Cob 380s, Duty Cycle Min -50 -45 -5 100 40 2% Typ 100 4 Max -0.1 -0.1 -0.7 -1.2 630 - Unit V V V A A V V MHz pF Test Conditions IC=-100A, IE=0 IC=-10mA, IB=0 IE=-100A, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA IC=-100mA, VCE=-1V IC=-300mA, VCE=-1V IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IC=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE1 Rank Range 16 100~250 25 160~400 40 250~630 |
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